FDMD86100

FDMD86100

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

POWER FIELD-EFFECT TRANSISTOR

Specifications

  • Series
    PowerTrench®
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual) Common Source
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    100V
  • Current - Continuous Drain (Id) @ 25°C
    10A
  • Rds On (Max) @ Id, Vgs
    10.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    2060pF @ 50V
  • Power - Max
    2.2W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Supplier Device Package
    8-Power 5x6

FDMD86100 Request a Quote

In Stock 13343
Quantity:
Unit Price (Reference Price):
1.62000
Target price:
Total:1.62000

Datasheet