FGA40T65SHDF

FGA40T65SHDF

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

INSULATED GATE BIPOLAR TRANSISTO

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    80 A
  • Current - Collector Pulsed (Icm)
    120 A
  • Vce(on) (Max) @ Vge, Ic
    1.81V @ 15V, 40A
  • Power - Max
    268 W
  • Switching Energy
    1.22mJ (on), 440µJ (off)
  • Input Type
    Standard
  • Gate Charge
    68 nC
  • Td (on/off) @ 25°C
    18ns/64ns
  • Test Condition
    400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr)
    101 ns
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3PN

FGA40T65SHDF Request a Quote

In Stock 14298
Quantity:
Unit Price (Reference Price):
2.23000
Target price:
Total:2.23000

Datasheet