Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Obsolete
• Transistor Type
  NPN - Pre-Biased
• Current - Collector (Ic) (Max)
  100 mA
• Voltage - Collector Emitter Breakdown (Max)
  50 V
• Resistor - Base (R1)
  10 kOhms
• Resistor - Emitter Base (R2)
  47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce
  68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic
  300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max)
  100nA (ICBO)
• Frequency - Transition
  250 MHz
• Power - Max
  300 mW
• Mounting Type
  Through Hole
• Package / Case
  TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package
  TO-92-3