FPNH10

FPNH10

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF SMALL SIGNAL TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    25V
  • Frequency - Transition
    650MHz
  • Noise Figure (dB Typ @ f)
    -
  • Gain
    -
  • Power - Max
    350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 4mA, 10V
  • Current - Collector (Ic) (Max)
    50mA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package
    TO-92-3

FPNH10 Request a Quote

In Stock 500997
Quantity:
Unit Price (Reference Price):
0.02000
Target price:
Total:0.02000

Datasheet