HGT1S3N60A4DS9A

HGT1S3N60A4DS9A

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

N-CHANNEL IGBT

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    17 A
  • Current - Collector Pulsed (Icm)
    40 A
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 3A
  • Power - Max
    70 W
  • Switching Energy
    37µJ (on), 25µJ (off)
  • Input Type
    Standard
  • Gate Charge
    21 nC
  • Td (on/off) @ 25°C
    6ns/73ns
  • Test Condition
    390V, 3A, 50Ohm, 15V
  • Reverse Recovery Time (trr)
    29 ns
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    TO-263AB

HGT1S3N60A4DS9A Request a Quote

In Stock 12874
Quantity:
Unit Price (Reference Price):
1.66000
Target price:
Total:1.66000

Datasheet