HGT1S7N60A4DS

HGT1S7N60A4DS

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

N-CHANNEL IGBT

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    34 A
  • Current - Collector Pulsed (Icm)
    56 A
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 7A
  • Power - Max
    125 W
  • Switching Energy
    55µJ (on), 60µJ (off)
  • Input Type
    Standard
  • Gate Charge
    37 nC
  • Td (on/off) @ 25°C
    11ns/100ns
  • Test Condition
    390V, 7A, 25Ohm, 15V
  • Reverse Recovery Time (trr)
    34 ns
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    TO-263AB

HGT1S7N60A4DS Request a Quote

In Stock 16734
Quantity:
Unit Price (Reference Price):
1.26000
Target price:
Total:1.26000

Datasheet