HSG1002VE-TL-E

HSG1002VE-TL-E

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF 0.035A C BAND GERMANIUM NPN

RFQ Email: [email protected] or Inquires online

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    3.5V
  • Frequency - Transition
    38GHz
  • Noise Figure (dB Typ @ f)
    0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
  • Gain
    8dB ~ 19.5dB
  • Power - Max
    200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 5mA, 2V
  • Current - Collector (Ic) (Max)
    35mA
  • Operating Temperature
    -
  • Mounting Type
    Surface Mount
  • Package / Case
    4-SMD, Gull Wing
  • Supplier Device Package
    4-MFPAK

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In Stock 34134
Quantity:
Unit Price (Reference Price):
0.30000
Target price:
Total:0.30000