HUFA75309D3S

HUFA75309D3S

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 55V 19A TO252AA

Specifications

  • Series
    UltraFET™
  • Package
    Tube
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    55 V
  • Current - Continuous Drain (Id) @ 25°C
    19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    70mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    24 nC @ 20 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    350 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    55W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    TO-252AA
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63

HUFA75309D3S Request a Quote

In Stock 46333
Quantity:
Unit Price (Reference Price):
0.22000
Target price:
Total:0.22000

Datasheet