IGP01N120H2

IGP01N120H2

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

POWER BIPOLAR TRANSISTOR NPN

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    3.2 A
  • Current - Collector Pulsed (Icm)
    3.5 A
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 1A
  • Power - Max
    28 W
  • Switching Energy
    140µJ
  • Input Type
    Standard
  • Gate Charge
    8.6 nC
  • Td (on/off) @ 25°C
    13ns/370ns
  • Test Condition
    800V, 1A, 241Ohm, 15V
  • Reverse Recovery Time (trr)
    -
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
    PG-TO220-3

IGP01N120H2 Request a Quote

In Stock 37271
Quantity:
Unit Price (Reference Price):
0.55000
Target price:
Total:0.55000