IJW120R100T1FKSA1

IJW120R100T1FKSA1

Manufacturer

Rochester Electronics

Product Category

Transistors - JFETs

Description

POWER FIELD-EFFECT TRANSISTOR

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Voltage - Breakdown (V(BR)GSS)
    -
  • Drain to Source Voltage (Vdss)
    1.2 V
  • Current - Drain (Idss) @ Vds (Vgs=0)
    1.5 µA @ 1.2 V
  • Current Drain (Id) - Max
    26 A
  • Voltage - Cutoff (VGS off) @ Id
    -
  • Input Capacitance (Ciss) (Max) @ Vds
    1550pF @ 19.5V (VGS)
  • Resistance - RDS(On)
    100 mOhms
  • Power - Max
    190 W
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    PG-TO247-3

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In Stock 3636
Quantity:
Unit Price (Reference Price):
18.60000
Target price:
Total:18.60000

Datasheet