IKW03N120H2FKSA1

IKW03N120H2FKSA1

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

DISCRETE IGBT WITH DIODE

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    1.2 V
  • Current - Collector (Ic) (Max)
    9.6 A
  • Current - Collector Pulsed (Icm)
    9.9 A
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 3A
  • Power - Max
    62.5 W
  • Switching Energy
    290µJ
  • Input Type
    Standard
  • Gate Charge
    22 nC
  • Td (on/off) @ 25°C
    9.2ns/281ns
  • Test Condition
    800V, 3A, 82Ohm, 15V
  • Reverse Recovery Time (trr)
    42 ns
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    PG-TO247-3

IKW03N120H2FKSA1 Request a Quote

In Stock 15519
Quantity:
Unit Price (Reference Price):
1.37000
Target price:
Total:1.37000

Datasheet