Specifications

• Series
  CoolMOS™
• Package
  Bulk
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  650 V
• Current - Continuous Drain (Id) @ 25°C
  3.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  10V
• Rds On (Max) @ Id, Vgs
  950mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id
  4.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs
  14.1 nC @ 10 V
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  380 pF @ 100 V
• FET Feature
  -
• Power Dissipation (Max)
  36.7W (Tc)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  PG-TO252-3
• Package / Case
  TO-252-3, DPak (2 Leads + Tab), SC-63