Specifications

• Series
  HEXFET®
• Package
  Tube
• Part Status
  Obsolete
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  40 V
• Current - Continuous Drain (Id) @ 25°C
  100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  9mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id
  4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  93 nC @ 10 V
• Vgs (Max)
  -
• Input Capacitance (Ciss) (Max) @ Vds
  2.9 pF @ 25 V
• FET Feature
  -
• Power Dissipation (Max)
  -
• Operating Temperature
  -
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-262
• Package / Case
  TO-262-3 Long Leads, I²Pak, TO-262AA