IRF510

IRF510

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 100V 5.6A TO220AB

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    100 V
  • Current - Continuous Drain (Id) @ 25°C
    5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    540mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    8.3 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    180 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    43W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-220AB
  • Package / Case
    TO-220-3

IRF510 Request a Quote

In Stock 111920
Quantity:
Unit Price (Reference Price):
0.09000
Target price:
Total:0.09000

Datasheet