Specifications

• Series
  HEXFET®
• Package
  Bulk
• Part Status
  Active
• FET Type
  P-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  150 V
• Current - Continuous Drain (Id) @ 25°C
  2.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  240mOhm @ 1.3A, 10V
• Vgs(th) (Max) @ Id
  5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  49 nC @ 10 V
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  1280 pF @ 25 V
• FET Feature
  -
• Power Dissipation (Max)
  2.5W (Ta)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  8-SO
• Package / Case
  8-SOIC (0.154", 3.90mm Width)