Specifications

• Series
  HEXFET®
• Package
  Bulk
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  25 V
• Current - Continuous Drain (Id) @ 25°C
  28A (Ta), 125A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  4.5V, 10V
• Rds On (Max) @ Id, Vgs
  1.7mOhm @ 28A, 10V
• Vgs(th) (Max) @ Id
  2.1V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs
  25 nC @ 4.5 V
• Vgs (Max)
  ±16V
• Input Capacitance (Ciss) (Max) @ Vds
  2.51 pF @ 13 V
• FET Feature
  -
• Power Dissipation (Max)
  2.1W (Ta), 42W (Tc)
• Operating Temperature
  -40°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  DIRECTFET™ S3C
• Package / Case
  DirectFET™ Isometric S3C