Specifications

• Series
  HEXFET®
• Package
  Bulk
• Part Status
  Active
• FET Type
  N and P-Channel
• FET Feature
  Logic Level Gate
• Drain to Source Voltage (Vdss)
  20V
• Current - Continuous Drain (Id) @ 25°C
  5.2A, 4.3A
• Rds On (Max) @ Id, Vgs
  50mOhm @ 2.6A, 4.5V
• Vgs(th) (Max) @ Id
  700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  20nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds
  660pF @ 15V
• Power - Max
  2W
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Package / Case
  8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package
  8-SO