Specifications

• Series
  HEXFET®
• Package
  Bulk
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  20 V
• Current - Continuous Drain (Id) @ 25°C
  6.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  2.7V, 4.5V
• Rds On (Max) @ Id, Vgs
  35mOhm @ 4.1A, 4.5V
• Vgs(th) (Max) @ Id
  700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  22 nC @ 4.5 V
• Vgs (Max)
  ±12V
• Input Capacitance (Ciss) (Max) @ Vds
  650 pF @ 15 V
• FET Feature
  -
• Power Dissipation (Max)
  2.5W (Ta)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  8-SO
• Package / Case
  8-SOIC (0.154", 3.90mm Width)