Specifications

• Series
  HEXFET®
• Package
  Bulk
• Part Status
  Active
• FET Type
  P-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  150 V
• Current - Continuous Drain (Id) @ 25°C
  5.5A
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  -
• Vgs(th) (Max) @ Id
  -
• Gate Charge (Qg) (Max) @ Vgs
  -
• Vgs (Max)
  -
• Input Capacitance (Ciss) (Max) @ Vds
  -
• FET Feature
  Standard
• Power Dissipation (Max)
  75W
• Operating Temperature
  -
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-204AE
• Package / Case
  TO-204AE