IRG7PH28UD1PBF

IRG7PH28UD1PBF

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

INSULATED GATE BIPOLAR GATE TRAS

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    Trench
  • Voltage - Collector Emitter Breakdown (Max)
    1.2 V
  • Current - Collector (Ic) (Max)
    30 A
  • Current - Collector Pulsed (Icm)
    100 A
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 15A
  • Power - Max
    115 W
  • Switching Energy
    543µJ (off)
  • Input Type
    Standard
  • Gate Charge
    90 nC
  • Td (on/off) @ 25°C
    -/229ns
  • Test Condition
    600V, 15A, 22Ohm, 15V
  • Reverse Recovery Time (trr)
    -
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AC

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In Stock 15748
Quantity:
Unit Price (Reference Price):
2.03000
Target price:
Total:2.03000

Datasheet