IRG8P50N120KD-EPBF

IRG8P50N120KD-EPBF

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

IRG8P50N120 - DISCRETE IGBT WITH

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    1.2 V
  • Current - Collector (Ic) (Max)
    80 A
  • Current - Collector Pulsed (Icm)
    105 A
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 35A
  • Power - Max
    350 W
  • Switching Energy
    2.3mJ (on), 1.9mJ (off)
  • Input Type
    Standard
  • Gate Charge
    315 nC
  • Td (on/off) @ 25°C
    35ns/190ns
  • Test Condition
    600V, 35A, 5Ohm, 15V
  • Reverse Recovery Time (trr)
    170 ns
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AD

IRG8P50N120KD-EPBF Request a Quote

In Stock 8534
Quantity:
Unit Price (Reference Price):
6.50000
Target price:
Total:6.50000

Datasheet