IRGP4750DPBF

IRGP4750DPBF

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

IGBT WITH RECOVERY DIODE

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    70 A
  • Current - Collector Pulsed (Icm)
    105 A
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 35A
  • Power - Max
    273 W
  • Switching Energy
    1.3mJ (on), 500µJ (off)
  • Input Type
    Standard
  • Gate Charge
    105 nC
  • Td (on/off) @ 25°C
    50ns/105ns
  • Test Condition
    400V, 35A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    150 ns
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AC

IRGP4750DPBF Request a Quote

In Stock 9169
Quantity:
Unit Price (Reference Price):
3.59000
Target price:
Total:3.59000

Datasheet