Specifications

• Series
  HEXFET®
• Package
  Bulk
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  30 V
• Current - Continuous Drain (Id) @ 25°C
  116A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  4.5V, 10V
• Rds On (Max) @ Id, Vgs
  7mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id
  3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  60 nC @ 4.5 V
• Vgs (Max)
  ±16V
• Input Capacitance (Ciss) (Max) @ Vds
  3.29 pF @ 25 V
• FET Feature
  -
• Power Dissipation (Max)
  3.8W (Ta), 180W (Tc)
• Operating Temperature
  -55°C ~ 175°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  D2PAK
• Package / Case
  TO-263-3, D²Pak (2 Leads + Tab), TO-263AB