ISL9N302AP3

ISL9N302AP3

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 30V 75A TO220-3

Specifications

  • Series
    UltraFET™
  • Package
    Tube
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    30 V
  • Current - Continuous Drain (Id) @ 25°C
    75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    2.5mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    300 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    11 pF @ 15 V
  • FET Feature
    -
  • Power Dissipation (Max)
    345W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-220-3
  • Package / Case
    TO-220-3

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In Stock 19215
Quantity:
Unit Price (Reference Price):
1.09000
Target price:
Total:1.09000

Datasheet