MJD340TF

MJD340TF

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Single

Description

NPN EPITAXIAL SILICON TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN
  • Current - Collector (Ic) (Max)
    500 mA
  • Voltage - Collector Emitter Breakdown (Max)
    300 V
  • Vce Saturation (Max) @ Ib, Ic
    -
  • Current - Collector Cutoff (Max)
    100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 50mA, 10V
  • Power - Max
    1.56 W
  • Frequency - Transition
    -
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package
    D-Pak

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In Stock 42634
Quantity:
Unit Price (Reference Price):
0.24000
Target price:
Total:0.24000

Datasheet