MMBTH10RG

MMBTH10RG

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF 0.05A, ULTRA HIGH FREQ BAND

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Frequency - Transition
    450MHz
  • Noise Figure (dB Typ @ f)
    -
  • Gain
    -
  • Power - Max
    225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 1mA, 6V
  • Current - Collector (Ic) (Max)
    50mA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3

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In Stock 167500
Quantity:
Unit Price (Reference Price):
0.06000
Target price:
Total:0.06000

Datasheet