MX0912B351Y,114

MX0912B351Y,114

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANSISTOR

Specifications

  • Series
    -
  • Package
    Tray
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    20V
  • Frequency - Transition
    1.215GHz
  • Noise Figure (dB Typ @ f)
    -
  • Gain
    7.6dB
  • Power - Max
    960W
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    -
  • Current - Collector (Ic) (Max)
    21A
  • Operating Temperature
    200°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-439A
  • Supplier Device Package
    CDFM2

MX0912B351Y,114 Request a Quote

In Stock 1053
Quantity:
Unit Price (Reference Price):
246.10000
Target price:
Total:246.10000

Datasheet