NGB8207BNT4G

NGB8207BNT4G

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

INSULATED GATE BIPOLAR TRANSISTO

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    365 V
  • Current - Collector (Ic) (Max)
    20 A
  • Current - Collector Pulsed (Icm)
    50 A
  • Vce(on) (Max) @ Vge, Ic
    2.6V @ 4V, 20A
  • Power - Max
    165 W
  • Switching Energy
    -
  • Input Type
    Logic
  • Gate Charge
    -
  • Td (on/off) @ 25°C
    -
  • Test Condition
    -
  • Reverse Recovery Time (trr)
    -
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    D2PAK

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In Stock 33222
Quantity:
Unit Price (Reference Price):
0.62000
Target price:
Total:0.62000

Datasheet