NGTB15N135IHRWG

NGTB15N135IHRWG

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

INSULATED GATE BIPOLAR TRANSISTO

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    1.35 V
  • Current - Collector (Ic) (Max)
    30 A
  • Current - Collector Pulsed (Icm)
    60 A
  • Vce(on) (Max) @ Vge, Ic
    2.65V @ 15V, 15A
  • Power - Max
    357 W
  • Switching Energy
    420µJ (off)
  • Input Type
    Standard
  • Gate Charge
    156 nC
  • Td (on/off) @ 25°C
    -/170ns
  • Test Condition
    600V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    -
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247

NGTB15N135IHRWG Request a Quote

In Stock 15620
Quantity:
Unit Price (Reference Price):
2.04000
Target price:
Total:2.04000

Datasheet