NGTB30N120FL2WG

NGTB30N120FL2WG

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

INSULATED GATE BIPOLAR TRANSISTO

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    1.2 V
  • Current - Collector (Ic) (Max)
    60 A
  • Current - Collector Pulsed (Icm)
    120 A
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 30A
  • Power - Max
    452 W
  • Switching Energy
    2.6mJ (on), 700µJ (off)
  • Input Type
    Standard
  • Gate Charge
    220 nC
  • Td (on/off) @ 25°C
    98ns/210ns
  • Test Condition
    600V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    240 ns
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247

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In Stock 7169
Quantity:
Unit Price (Reference Price):
4.79000
Target price:
Total:4.79000

Datasheet