NSTB60BDW1T1

NSTB60BDW1T1

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

SMALL SIGNAL BIPOLAR TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max)
    150mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    22kOhms
  • Resistor - Emitter Base (R2)
    47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V / 120 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    140MHz
  • Power - Max
    250mW
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    SC-88/SC70-6/SOT-363

NSTB60BDW1T1 Request a Quote

In Stock 200980
Quantity:
Unit Price (Reference Price):
0.05000
Target price:
Total:0.05000

Datasheet