NSVB123JPDXV6T1G

NSVB123JPDXV6T1G

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

SMALL SIGNAL BIPOLAR TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max)
    100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    2.2kOhms
  • Resistor - Emitter Base (R2)
    4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    -
  • Power - Max
    500mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Supplier Device Package
    SOT-563

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In Stock 125808
Quantity:
Unit Price (Reference Price):
0.08000
Target price:
Total:0.08000

Datasheet