NTDV5805NT4G

NTDV5805NT4G

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 40V 51A DPAK

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    40 V
  • Current - Continuous Drain (Id) @ 25°C
    51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Rds On (Max) @ Id, Vgs
    9.5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    80 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1.725 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    -
  • Operating Temperature
    -
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    DPAK
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock 31212
Quantity:
Unit Price (Reference Price):
0.33000
Target price:
Total:0.33000

Datasheet