NTGD4161PT1G

NTGD4161PT1G

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

P-CHANNEL POWER MOSFET

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    2 P-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V
  • Current - Continuous Drain (Id) @ 25°C
    1.5A
  • Rds On (Max) @ Id, Vgs
    160mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    7.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    281pF @ 15V
  • Power - Max
    600mW
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package
    6-TSOP

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In Stock 46412
Quantity:
Unit Price (Reference Price):
0.22000
Target price:
Total:0.22000

Datasheet