Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Obsolete
• FET Type
  P-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  20 V
• Current - Continuous Drain (Id) @ 25°C
  3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  1.5V, 4.5V
• Rds On (Max) @ Id, Vgs
  40mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id
  1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  15.7 nC @ 4.5 V
• Vgs (Max)
  ±8V
• Input Capacitance (Ciss) (Max) @ Vds
  1.329 pF @ 16 V
• FET Feature
  -
• Power Dissipation (Max)
  700mW (Ta)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  6-WDFN (2x2)
• Package / Case
  6-WDFN Exposed Pad