NTMD2C02R2G

NTMD2C02R2G

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

P-CHANNEL POWER MOSFET

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    N and P-Channel
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    5.2A, 3.4A
  • Rds On (Max) @ Id, Vgs
    43mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    1100pF @ 10V
  • Power - Max
    2W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SOIC

NTMD2C02R2G Request a Quote

In Stock 27912
Quantity:
Unit Price (Reference Price):
0.37000
Target price:
Total:0.37000

Datasheet