NTMFD4C86NT3G

NTMFD4C86NT3G

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

NTMFD4C86N - POWERPHASE, DUAL N-

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    2 N-Channel (Dual) Asymmetrical
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    30V
  • Current - Continuous Drain (Id) @ 25°C
    11.3A, 18.1A
  • Rds On (Max) @ Id, Vgs
    5.4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1153pF @ 15V
  • Power - Max
    1.1W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Supplier Device Package
    8-DFN (5x6)

NTMFD4C86NT3G Request a Quote

In Stock 13519
Quantity:
Unit Price (Reference Price):
2.37000
Target price:
Total:2.37000

Datasheet