Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  30 V
• Current - Continuous Drain (Id) @ 25°C
  8.9A (Ta), 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  4.5V, 10V
• Rds On (Max) @ Id, Vgs
  5.5mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id
  2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  28 nC @ 10 V
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  1.979 pF @ 15 V
• FET Feature
  -
• Power Dissipation (Max)
  850mW (Ta), 29.8W (Tc)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  8-WDFN (3.3x3.3)
• Package / Case
  8-PowerWDFN