NVMFD5485NLT1G

NVMFD5485NLT1G

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

POWER FIELD-EFFECT TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    60V
  • Current - Continuous Drain (Id) @ 25°C
    5.3A
  • Rds On (Max) @ Id, Vgs
    44mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    560pF @ 25V
  • Power - Max
    2.9W
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Supplier Device Package
    8-DFN (5x6) Dual Flag (SO8FL-Dual)

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In Stock 24747
Quantity:
Unit Price (Reference Price):
0.84000
Target price:
Total:0.84000

Datasheet