PBLS2002S,115

PBLS2002S,115

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

SMALL SIGNAL BIPOLAR TRANSISTOR,

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max)
    100mA, 3A
  • Voltage - Collector Emitter Breakdown (Max)
    50V, 20V
  • Resistor - Base (R1)
    4.7kOhms
  • Resistor - Emitter Base (R2)
    4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 10mA, 5V / 150 @ 2A, 2V
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
  • Current - Collector Cutoff (Max)
    1µA, 100nA
  • Frequency - Transition
    100MHz
  • Power - Max
    1.5W
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SO

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In Stock 100804
Quantity:
Unit Price (Reference Price):
0.10000
Target price:
Total:0.10000