PDTC114EM,315

PDTC114EM,315

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

NPN RESISTOR-EQUIPPED TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    100 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    10 kOhms
  • Resistor - Emitter Base (R2)
    10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max)
    1µA
  • Frequency - Transition
    -
  • Power - Max
    250 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-101, SOT-883
  • Supplier Device Package
    DFN1006-3

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In Stock 334294
Quantity:
Unit Price (Reference Price):
0.03000
Target price:
Total:0.03000

Datasheet