Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Active
• Transistor Type
  NPN - Pre-Biased
• Current - Collector (Ic) (Max)
  100 mA
• Voltage - Collector Emitter Breakdown (Max)
  50 V
• Resistor - Base (R1)
  2.2 kOhms
• Resistor - Emitter Base (R2)
  10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce
  35 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic
  150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max)
  1µA
• Frequency - Transition
  230 MHz
• Power - Max
  250 mW
• Mounting Type
  Surface Mount
• Package / Case
  3-XFDFN
• Supplier Device Package
  DFN1006B-3