PDTD113EQAZ

PDTD113EQAZ

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

PDTD113 - 50V, 500 MA UPN RESIST

Specifications

  • Series
    Automotive, AEC-Q101
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    500 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    1 kOhms
  • Resistor - Emitter Base (R2)
    1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    210 MHz
  • Power - Max
    325 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XDFN Exposed Pad
  • Supplier Device Package
    DFN1010D-3

PDTD113EQAZ Request a Quote

In Stock 334297
Quantity:
Unit Price (Reference Price):
0.03000
Target price:
Total:0.03000

Datasheet