PEMD20,115

PEMD20,115

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

NOW NEXPERIA PEMD20 - SMALL SIGN

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max)
    100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    2.2kOhms
  • Resistor - Emitter Base (R2)
    2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max)
    1µA
  • Frequency - Transition
    -
  • Power - Max
    300mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Supplier Device Package
    SOT-666

PEMD20,115 Request a Quote

In Stock 334209
Quantity:
Unit Price (Reference Price):
0.03000
Target price:
Total:0.03000

Datasheet