PMBFJ110,215

PMBFJ110,215

Manufacturer

Rochester Electronics

Product Category

Transistors - JFETs

Description

PMBFJ110 - N-CHANNEL FET

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    N-Channel
  • Voltage - Breakdown (V(BR)GSS)
    25 V
  • Drain to Source Voltage (Vdss)
    25 V
  • Current - Drain (Idss) @ Vds (Vgs=0)
    10 mA @ 15 V
  • Current Drain (Id) - Max
    -
  • Voltage - Cutoff (VGS off) @ Id
    4 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds
    30pF @ 10V (VGS)
  • Resistance - RDS(On)
    18 Ohms
  • Power - Max
    250 mW
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23 (TO-236AB)

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Datasheet