SGF23N60UFTU

SGF23N60UFTU

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

INSULATED GATE BIPOLAR TRANSISTO

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    23 A
  • Current - Collector Pulsed (Icm)
    92 A
  • Vce(on) (Max) @ Vge, Ic
    2.6V @ 15V, 12A
  • Power - Max
    75 W
  • Switching Energy
    115µJ (on), 135µJ (off)
  • Input Type
    Standard
  • Gate Charge
    -
  • Td (on/off) @ 25°C
    17ns/60ns
  • Test Condition
    300V, 12A, 23Ohm, 15V
  • Reverse Recovery Time (trr)
    -
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3 Full Pack
  • Supplier Device Package
    TO-3PF

SGF23N60UFTU Request a Quote

In Stock 16265
Quantity:
Unit Price (Reference Price):
1.31000
Target price:
Total:1.31000

Datasheet