SPD18P06P

SPD18P06P

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET P-CH 60V 18.6A TO252-3

Specifications

  • Series
    SIPMOS®
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    18.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    130mOhm @ 13.2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    33 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    860 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    80W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-TO252-3
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock 24235
Quantity:
Unit Price (Reference Price):
0.43000
Target price:
Total:0.43000

Datasheet