SS9018GBU

SS9018GBU

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF 0.05A, VERY HIGH FREQUENCY BA

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    15V
  • Frequency - Transition
    1.1GHz
  • Noise Figure (dB Typ @ f)
    -
  • Gain
    -
  • Power - Max
    400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    72 @ 1mA, 5V
  • Current - Collector (Ic) (Max)
    50mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package
    TO-92-3

SS9018GBU Request a Quote

In Stock 334157
Quantity:
Unit Price (Reference Price):
0.03000
Target price:
Total:0.03000

Datasheet