Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Obsolete
• FET Type
  P-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  12 V
• Current - Continuous Drain (Id) @ 25°C
  5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  50mOhm @ 2.5A, 4.5V
• Vgs(th) (Max) @ Id
  1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs
  5.5 nC @ 10 V
• Vgs (Max)
  -
• Input Capacitance (Ciss) (Max) @ Vds
  610 pF @ 10 V
• FET Feature
  -
• Power Dissipation (Max)
  200mW (Ta)
• Operating Temperature
  150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  6-WSOF
• Package / Case
  6-SMD, Flat Leads