Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Active
• FET Type
  2 N-Channel (Half Bridge)
• FET Feature
  Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss)
  1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C
  204A (Tc)
• Rds On (Max) @ Id, Vgs
  -
• Vgs(th) (Max) @ Id
  4V @ 35.2mA
• Gate Charge (Qg) (Max) @ Vgs
  -
• Input Capacitance (Ciss) (Max) @ Vds
  23000pF @ 10V
• Power - Max
  1130W
• Operating Temperature
  -40°C ~ 150°C (TJ)
• Mounting Type
  -
• Package / Case
  Module
• Supplier Device Package
  Module